Today, almost all aspects of life are influenced or even enabled by systems that require the application of semiconductor devices. Various types of data storage capabilities are essential in such systems and semiconductor memories on all hierarchy levels are becoming even more important by the increasing use of artificial intelligence in electronic systems. Moreover, traditional charge-based memory devices are facing serious scaling limits. Therefore, the effort to bring memories based on other physical mechanisms like ferroelectric polarization, magnetoresistance, phase change, and various resistive switching effects have been continuously increased.